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SC120 70N6T CR6927 C4010 D7801 TLYM1050 09015 ESD3V
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  ds23042 rev. c-2 1 of 2 sbl1030 - SBL1060 www.diodes.com  diodes incorporated sbl1030 - SBL1060 10a schottky barrier rectifier features l m a n p d e k c b j g r pin 1 + pin 1 pin 2 pin 2 - case + to-220ac dim min max a 14.22 15.88 b 9.65 10.67 c 2.54 3.43 d 5.84 6.86 e  6.35 g 12.70 14.73 j 0.51 1.14 k 3.53  4.09  l 3.56 4.83 m 1.14 1.40 n 0.30 0.64 p 2.03 2.92 r 4.83 5.33 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25  c unless otherwise specified  schottky barrier chip  guard ring die construction for transient protection  low power loss, high efficiency  high surge capability  high current capability and low forward voltage drop  for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications  plastic material: ul flammability classification rating 94v-0 mechanical data  case: molded plastic  terminals: plated leads solderable per mil-std-202, method 208  polarity: see diagram  weight: 2.24 grams (approx.)  mounting position: any  marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol sbl 1030 sbl 1035 sbl 1040 sbl 1045 sbl 1050 sbl 1060 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current @ t c = 95  c (note 1) i o 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 250 a forward voltage drop @ i f = 10a, t c = 25  c v fm 0.60 0.75 v peak reverse current @ t c = 25  c at rated dc blocking voltage @ t c = 100  c i rm 1.0 50 ma typical junction capacitance (note 2) c j 700 pf thermal resistance junction to case (note 1) r  jc 3.5  c/w operating and storage temperature range t j, t stg -65 to +150  c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc.
ds23042 rev. c-2 2 of 2 sbl1030 - SBL1060 www.diodes.com 0.1 1.0 10 100 0.2 0.4 0.6 0.8 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g .2 t y pical forward characteristics sbl1030ct - sbl10450ct sbl1050ct - SBL1060ct 50 100 150 0 200 250 300 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fi g . 3 max non-repetitive sur g e current 8.3 ms single half-sine-wave jedec method 100 1000 4 000 0.1 1.0 10 100 c , capacitance (pf) j v , reverse voltage (v) r fi g .4 t y pical junction capacitance per element t = 25 c j 0.01 0.1 1.0 10 100 0 40 80 120 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g .5 t y pical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 0 4 8 12 16 20 050100150 i , average forward current (a) (av) t , case temperature ( c) c fi g . 1 forward current deratin g curve


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